Analytical Investigation of GaAs and Si Characteristics: Impact of Temperature and Doping Concentration

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dc.contributor.authoreshqobilov, olim
dc.date.accessioned2025-11-22T08:42:27Z
dc.date.available2025-11-22T08:42:27Z
dc.date.issued2025-06
dc.identifier.urihttps://dspace.kstu.uz/xmlui/handle/123456789/2928
dc.language.isoenen_US
dc.publisherSixteen International Conference on Thermal Engineering: Theory and Applicationsen_US
dc.subjectheterojunction (HJ), conduction band offset, absorbing, built-in potential, band gap narrowing (BGN)en_US
dc.titleAnalytical Investigation of GaAs and Si Characteristics: Impact of Temperature and Doping Concentrationen_US
dc.typeArticleen_US

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