ФОРМИРОВАНИЕ МНОГОСЛОЙНОЙ НАНОСИСТЕМЫ Si/NiSi2/Si, ПОЛУЧЕННЫХ МЕТОДОМ ТВЕРДОФАЗНОГО ОСАЖДЕНИЯ

Abstract

This article presents the results of the formation of a multilayer nanosystem Si/NiSi2/Si obtained by solid-phase deposition. The study focuses on the composition, morphology, and electronic structure of the silicon nanolayer on the surface of the epitaxial NiSi2/Si(111) structure at high temperatures. It is shown that at a temperature of 1000 K, a continuous polycrystalline silicon film is formed, whereas at 1150 K, the film breaks down and intense nickel diffusion occurs. It is also established that under certain conditions, epitaxial NiSi₂ films with good ohmic properties can be formed. The obtained results have practical significance for the development of high-frequency transistors and next-generation integrated circuits.