STRUCTURAL CHARACTERISTICS AND OPTICAL PROPERTIES OF SiC THIN FILMS PRODUCED BY THE RF-PVD METHOD

Abstract

We studied the silicon carbide semiconductor compound, which is widely used as the most characteristic material in the preparation of semiconductors. In the radio frequency (RF) mode of the magnetron sputtering device, 300-400 nm thick SiC thin films were formed in an Ar environment as a reactive gas in a vacuum of 10-4 Torr. In the radio frequency mode, a power of 240 W with a frequency of 100 kHz and D=70% were used. The maximum sputtering speed of the magnetron was 50 Ǻ/s. A circular silicon carbide (SiC) target with a diameter of 76.2 mm and a compound content of (99.9%) was used. X-ray analysis of the obtained films was performed on an XRD- 6100 device and the Miller indices were determined. In addition, the optical parameters of the thin films were determined. FTIR spectroscopic analysis showed a relative decrease in the transmission spectrum in the far-IR region from 13.1% to 8.9% with increasing SiC film thickness in the range of 480-400 cm-1. Characteristic peaks associated with Si-C and C≡C vibrations were also detected. A characteristic Si-C stretching absorption was observed at a wave number of 780 cm-1, where the IR absorption was 88.7%. At a wave number of 2180 cm-1, it corresponds to a triple covalent bond of C≡C. The results showed that the optical and electrical properties of SiC films can be easily tuned by changing the Si and C concentrations in the coating for the same film thickness.