Analytical Investigation of GaAs and Si Characteristics: Impact of Temperature and Doping Concentration

eshqobilov, olim2025-11-222025-11-222025-06https://dspace.kstu.uz/xmlui/handle/123456789/2928enheterojunction (HJ), conduction band offset, absorbing, built-in potential, band gap narrowing (BGN)Analytical Investigation of GaAs and Si Characteristics: Impact of Temperature and Doping ConcentrationArticle